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FDAF59N30 Datasheet, MOSFET, Fairchild Semiconductor

FDAF59N30 Datasheet, MOSFET, Fairchild Semiconductor

FDAF59N30

datasheet Download (Size : 792.38KB)

FDAF59N30 Datasheet
FDAF59N30

datasheet Download (Size : 792.38KB)

FDAF59N30 Datasheet

FDAF59N30 Features and benefits

FDAF59N30 Features and benefits


* 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 80 pF)
* Fast switching
* 100% avalanche tested
.

FDAF59N30 Description

FDAF59N30 Description

TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior s.

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FDAF59N30 Page 1 FDAF59N30 Page 2 FDAF59N30 Page 3

TAGS

FDAF59N30
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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